BUZ900

MAGNA www.DataSheet4U.com TEC 25.0 +0.1 -0.15 BUZ900 BUZ901 MECHANICAL DATA Dimensions in mm N–CHANNEL POWER MOSFET 8.7 Max. 1.50 Typ. 11.60 ± 0.3 10.90 ± 0.1 POWER MOSFETS FOR AUDIO APPLICATIONS 30.2 ± 0.15 Ø 20 M ax. 39.0 ± 1.1 16.9 ± 0.15 1 2 Ø 1.0 FEATURES HIGH SPEED SWITCHING N–CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 ± 0.1 R 4.4 ± 0.2 HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE Case – Source P–CHANNEL ALSO AVAILABLE AS BUZ905 & BUZ906 TO–3 Pin 1 – Gate Pin 2 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900 160V ±14V 8A 8A 125W –55 to 150°C 150°C 1°C/W BUZ901 200V Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612. Prelim. 10/94 MAGNA www.DataSheet4U.com TEC Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage BUZ900 BUZ901 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions VGS = –10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 BUZ900 BUZ901 IG = ±100µA ID = 100mA ID = 8A VDS = 160V IDSX Drain – Source Cut–Off Current VGS = –...