70N10L SPI70N10L Datasheet

70N10L Datasheet, PDF, Equivalent


Part Number

70N10L

Description

SPI70N10L

Manufacture

Infineon Technologies

Total Page 8 Pages
Datasheet
Download 70N10L Datasheet


70N10L
www.DataSheet4U.com
Preliminary data
SPI70N10L
SPP70N10L,SPB70N10L
SIPMOS=Power-Transistor
Feature
 N-Channel
 Enhancement mode
 Logic Level
175°C operating temperature
P-TO262-3-1
 Avalanche rated
 dv/dt rated
Product Summary
VDS 100 V
RDS(on) 16 m
ID 70 A
P-TO263-3-2
P-TO220-3-1
Type
SPP70N10L
SPB70N10L
SPI70N10L
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4175
Q67040-S4170
Q67060-S7428
Marking
70N10L
70N10L
70N10L
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25
Avalanche energy, periodic limited by Tjmax
ID puls
EAS
EAR
Reverse diode dv/dt
dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
Gate source voltage
VGS
Power dissipation
TC=25°C
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Page 1
Value
70
50
280
Unit
A
700 mJ
25
6 kV/µs
±20 V
250 W
-55... +175
55/175/56
°C
2001-08-24

70N10L
www.DataSheet4U.com
Preliminary data
Thermal Characteristics
Parameter
Symbol
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJC
RthJA
RthJA
SPI70N10L
SPP70N10L,SPB70N10L
Values
Unit
min. typ. max.
- - 0.6 K/W
- - 62.5
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
-
-
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
ID = 2 mA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C
VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
VGS(th) 1.2 1.6
2
IDSS
IGSS
- 0.1 1
- - 100
- 10 100
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=50A
Drain-source on-state resistance
VGS=10V, ID=50A
RDS(on) - 14 25
RDS(on) - 10 16
Unit
V
µA
nA
m
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-08-24


Features www.DataSheet4U.com Preliminary data S PI70N10L SPP70N10L,SPB70N10L Feature SIPMOS =Power-Transistor Product Su mmary VDS RDS(on) ID P-TO262-3-1 P-TO26 3-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating tempera ture  Avalanche rated  dv/dt rated 1 00 16 70 P-TO220-3-1 V m A Type SPP7 0N10L SPB70N10L SPI70N10L Package P-TO 220-3-1 P-TO263-3-2 P-TO262-3-1 Orderi ng Code Q67040-S4175 Q67040-S4170 Q6706 0-S7428 Marking 70N10L 70N10L 70N10L Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuou s drain current TC=25°C TC=100°C Sym bol ID Value 70 50 Unit A Pulsed dra in current TC=25°C ID puls EAS EAR dv /dt VGS Ptot Tj , Tstg Page 1 280 700 25 6 ±20 250 -55... +175 55/175/56 200 1-08-24 kV/µs V W °C mJ Avalanche en ergy, single pulse ID =70 A , VDD =25V, RGS =25 Avalanche energy, periodic l imited by Tjmax Reverse diode dv/dt IS =70A, VDS =0V, di/dt=200A/µs Gate sou rce voltage Power dissipation TC=25°C Operating and storage temperature I.
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