K3161

www.DataSheet4U.com 2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1 1 2 3 2 3 S Rev.3.00 Sep 07, 2005 page 1 of 8 2SK3161 Absolute Maximum Ratings www.DataSheet4U.com (Ta = 25°C) Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 200 ±20 15 60 15 15 15 75 150 –55 to +150 Unit V V A A A A mJ W °C °C Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode ...