2SC2233

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) ·DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2233 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB=0.4A ICBO Collector Cutoff Current VCB= 170V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE -1 DC Current Gain IC= 1A ; VCE= 5V hFE -2 DC Current Gain IC= 4A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V 2SC2233 MIN TYP. MAX UNIT 1.0 V 1.5 V 10 μA 10 μA 30 150 20 8 MHz Notice： ISC reserves the rights to make changes ...