2SC3856 | SavantIC
SILICON POWER TRANSISTOR
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3856
DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj T.
- 2SC3856 | INCHANGE
- NPN Transistor
- isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=.
- isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1492 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
1.
- 2SC3856 | SavantIC
- SILICON POWER TRANSISTOR
- SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2S.
- SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
2SC3856
DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emi.
- 2SC3856 | Sanken electric
- Silicon NPN Transistor
- 2SC3856
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)
Application : A.
- 2SC3856
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO
200
V
VCEO
180
V
VEBO
6
V
IC
15
A
IB
4
A
PC
130(Tc=25°C)
W
Tj
150
°C
Tstg
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol
Conditions
Ratings Unit
ICBO IEBO
VCB=200V VEB=6V
100max
µA
100max
µA
V(BR)CEO
IC=50mA
1.
- 2SC3856-P | Inchange Semiconductor
- Silicon NPN Transistor
- INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRI.
- INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
180 V
VEBO
Emitter-Base Voltage
6V
IC Collector Cu.