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AP01N60H/J
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
G S D
BVDSS RDS(ON) ID
600V 8Ω 1.6A
Description
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications.
G DS
TO-252(H)
G D S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 600 ±30 1.6 1 6 39 0.31
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
13 1.6 0.5 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 110 Units ℃/W ℃/W
200705052-1/4
Data & specifications subject to change without notice
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Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=1mA
Min. 600 2 -
Typ. 0.6 7.2 0.8 7.7 1.5 2.6 8 5 14 7 286 25 5
Max. Units 8 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C)
o o
VGS=10V, ID=0.8A VDS=VGS, ID=250uA VDS=50V, ID=0.8A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=±30V ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A RG=10Ω,VGS=10V RD=187.5Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.5V
1
Min. -
Typ. -
Max. Units 1.6 6 1.5 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=1.6A, VGS=0V
Notes: 1.Pulse width limited by safe operating area.
o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω , IAS=1.6A.
3.Pulse width <300us , duty cycle <2%.
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AP01N60H/J
0.9
1.5
T C =25 C
o
ID , Drain Current (A)
ID , Drain Current (A)
10V 6.0V 5.5V
T C =150 o C
10V 6.0V 5.5V
1
0.6
5.0V
0.5
5.0V
0.3
V G = 4.5 V
V G = 4.5 V
0 0 5 10 15 20 0 0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
Normalized BVDSS (V)
Normalized RDS(ON)
1.1
I D =0.8A V G =10V
2
1
1
0.9
0.8 -50 0 50 100 150
0 -50 0 50 100 150
T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C )
Fig 3. Normalized BVDSS v.s. Junction Temperature
100 5
Fig 4. Normalized On-Resistance v.s. Junction Temperature
4
IS (A)
10
T j = 150 o C
T j = 25 o C
VGS(th) (V)
3
1 2
0.1 0 0.2 0.4 0.6 0.8 1 1.2
1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C )
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
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AP01N60H/J
f=1.0MHz
16 1000
VGS , Gate to Source Voltage (V)
12
I D =1.6A V DS =480V
100
C iss
8
C (pF)
C oss
10
4
C rss
0 0 2 4 6 8 10
1 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10us
1
100us 1ms 10ms
0.2
ID (A)
0.1
0.1
0.05
PDM
0.02
0.1
t T
Single Pulse
T c =25 o C Single Pulse
0.01 1 10 100
100ms
0.01
Duty factor = t/T Peak Tj = PDM x Rthjc + T C
0.01 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 10V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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