2SC3896

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3896 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 70 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 1500 800 6 8 25 3.0 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ;IB=0 IC=6A ;IB=1.5A IC=6A ;IB=1.5A VCB=800V ;IE=0 VCE=1500V; RBE=0 VEB=4V ;IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V 8 4 MIN 800 2SC3896 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 TYP. MAX UNIT V 5.0 1.5 10 1.0 1.0 V V µA mA mA 8 Switching times tstg tf Storage time Fall time 3.0 0.1 0.2 µs µs IC=6A ; VCC=200V IB1=1.2A; IB2=2.4A R...