2SB1324

SMD Type www.DataSheet4U.com Transistors PNP Epitaxial Planar Silicon Transistors 2SB1324 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between collector and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature * Mounted on ceramic board (250mm2X0.8mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg Rating -40 -30 -6 -3 -5 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type www.DataSheet4U.com Transistors 2SB1324 Electrical Characteristics Ta = 25 Parameter Collector cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter on state voltage Diode forward voltage Base-emitter resistance Symbol ICBO hFE fT Cob VCE(sat) VBE(sat) Testconditons VCB = 30V , IE = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -2A VCE = -2V , IC = -0.5A VCB = -10V , f = 1MHz IC = -2A , IB = -100mA VCE = -2V , IC = -1A -40 -40 -30 1.5 0.8 70 50 100 55 -0.25 -0.6 -1.5 MHz pF V V V V V V KÙ Min Typ Max -1 Unit ìA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -10ìA , RBE = V(B...