Power MOSFET. IXTP110N055P Datasheet

IXTP110N055P MOSFET. Datasheet pdf. Equivalent


IXYS Corporation IXTP110N055P
PolarHTTM
www.DataSheet4U.com
Power MOSFET
N-Channel Enhancement Mode
IXTQ 110N055P
IXTA 110N055P
IXTP 110N055P
VDSS = 55 V
ID25 = 110 A
RDS(on) = 13.5 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
V
DGR
VGS
VGSM
I
D25
I
DRMS
IDM
I
AR
E
AR
EAS
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Continuous
Tranisent
T
C
= 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
T
C
= 25°C
TC = 25°C
55 V
55 V
±20 V
±30 V
110 A
75 A
250 A
110 A
30 mJ
1.0 J
dv/dt
PD
TJ
TJM
Tstg
TL
I
S
I,
DM
di/dt
100
A/μs,
V
DD
V,
DSS
TJ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
10 V/ns
330
-55 ... +175
175
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
Md Mounting torque (TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 μA
5.5 g
4g
3g
Characteristic Values
Min. Typ. Max.
55 V
V
GS(th)
V
DS
=
V,
GS
I
D
=
250μA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
11 13.5 mΩ
G
D
S
TO-220 (IXTP)
(TAB)
G DS
TO-263 (IXTA)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99182A(05/05)


IXTP110N055P Datasheet
Recommendation IXTP110N055P Datasheet
Part IXTP110N055P
Description PolarHT Power MOSFET
Feature IXTP110N055P; www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode IXTQ 110N055P IXTA 110N055P .
Manufacture IXYS Corporation
Datasheet
Download IXTP110N055P Datasheet




IXYS Corporation IXTP110N055P
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
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Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
V = 10 V; I = 0.5 I , pulse test
23 36
fs DS D D25
S
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
2210
1400
550
pF
pF
pF
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 10 Ω (External)
27 ns
53 ns
66 ns
45 ns
Q
g(on)
Qgs
Q
gd
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
76 nC
17 nC
33 nC
RthJC
RthCK
(TO-3P)
(TO-220)
0.21
0.25
0.38 K/W
K/W
K/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS VGS = 0 V
110 A
I Repetitive
SM
250 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 μs, duty cycle d 2 %
1.5 V
t I = 25 A
rr F
-di/dt = 100 A/μs
QRM VR = 25 V
120 ns
1.4 μC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692



IXYS Corporation IXTP110N055P
Fig. 1. Output Characteristics
www.DataSheet4U.com
@ 25ºC
110
100 VGS = 10V
9V
90
80
70 8V
60
7V
50
40
30 6V
20
10
0
0
0.2 0.4 0.6 0.8 1
VD S - Volts
5V
1.2 1.4
1.6
110
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 150ºC
VGS = 10V
9V
8V
7V
6V
5V
0.4 0.8 1.2 1.6
2
VD S - Volts
2.4 2.8
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
2.8
2.6
2.4
2.2
2 TJ = 175ºC
1.8
1.6
1.4
1.2 VGS = 15V
1
VGS = 10V
TJ = 25ºC
0.8
0.6
0
25 50 75 100 125 150 175 200 225 250
I D - Amperes
© 2005 IXYS All rights reserved
IXTA 110N055P IXTP 110N055P
IXTQ 110N055P
Fig. 2. Extended Output Characteristics
@ 25ºC
220
200 VGS = 10V
180
160 9V
140
120 8V
100
80 7V
60
40 6V
20
5V
0
0 1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
2.2
2 VGS = 10V
1.8
1.6 ID = 110A
1.4
ID = 55A
1.2
1
0.8
-50 -25
0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
120
100
80
60
40
20
0
-50 -25
0 25 50 75 100 125 150 175
TC - Degrees Centigrade







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