SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-22...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter
2SC3973 2SC3973A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER 2SC3973 Collector-base voltage 2SC3973A Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 Collector power dissipation Ta=25 Junction temperature Storage temperature 2 150 -55~150 Open base Open collector Open emitter 900 500 8 7 15 4 45 W V V A A A CONDITIONS VALUE 800 V UNIT
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SC3973 2SC3973A CONDITIONS IC=10mA , IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0
2SC3973 2SC3973A
SYMBOL V(BR)CEO VCEsat VBEsat
MIN 500
TYP.
MAX
UNIT V
1.0 1.5
V V
ICBO
Collector cut-off current
0.1 VCB=900V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=4A ; VCE=5V IC=0.5A ; VCE=10V 15 8 20 0.1
mA
IEBO hFE-1 hFE-2 fT
Emitter cut-off current DC current gain DC current gain Transition frequency...