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IRF3205ZLPbF Dataheets PDF



Part Number IRF3205ZLPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3205ZLPbF DatasheetIRF3205ZLPbF Datasheet (PDF)

PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swit.

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PD - 95129A Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 6.5mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. S ID = 75A TO-220AB D2Pak TO-262 IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 110 78 75 440 170 Units A W Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy 1.1 ± 20 180 250 See Fig.12a, 12b, 15, 16 W/°C V mJ A mJ TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds i Mounting Torque, 6-32 or M3 screw Thermal Resistance 300 (1.6mm from case ) y y 10 lbf in (1.1N m) RθJC RθCS RθJA RθJA Parameter Junction-to-Case i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount) Typ. ––– 0.50 ––– ––– Max. 0.90 ––– 62 40 Units °C/W www.irf.com 1 07/23/10 IRF3205ZS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance 55 ––– ––– ––– 0.051 ––– ––– 4.9 6.5 V VGS = 0V, ID = 250µA e V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 66A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 71 ––– ––– S VDS = 25V, ID = 66A IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V Qg Total Gate Charge ––– 76 110 ID = 66A Qgs Qgd Gate-to-Source Charge Gate-to-Drain ("Miller") Charge ––– ––– 21 30 ––– ––– e nC VDS = 44V VGS = 10V td(on) Turn-On Delay Time ––– 18 ––– VDD = 28V tr Rise Time ––– 95 ––– ID = 66A td(off) tf Turn-Off Delay Time Fall Time ––– ––– 45 67 ––– ––– e ns RG = 6.8 Ω VGS = 10V LD Internal Drain Inductance ––– 4.5 ––– Between lead, LS Internal Source Inductance nH 6mm (0.25in.) ––– 7.5 ––– from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ––– 3450 ––– ––– 550 ––– ––– 310 ––– ––– 1940 ––– ––– 430 ––– ––– 640 ––– and center of die contact VGS = 0V VDS = 25V pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz f VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 75 MOSFET symbol (Body Diode) ISM Pulsed Source Current Ù (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ––– ––– 440 A showing the integral reverse ––– ––– 1.3 ––– 28 42 ––– 25 38 e p-n junction diode. V TJ = 25°C, IS = 66A, VGS = 0V e ns TJ = 25°C, IF = 66A, VDD = 25V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com ID, Drain-to-Source Current (A) IRF3205ZS/LPbF ID, Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 1 0.1 4.5V 20µs PULSE WIDTH Tj = 25°C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 0.1 4.5V 20µs PULSE WIDTH Tj = 175°C 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics ID, Drain-to-Source Current (A) 1000 100 TJ = 25°C TJ = 175°C 10.


IRF3205ZPbF IRF3205ZLPbF 2SC4242


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