Document
PD - 95129A
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 6.5mΩ
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S
ID = 75A
TO-220AB
D2Pak
TO-262
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max. 110 78 75 440 170
Units A
W
Linear Derating Factor
VGS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
1.1 ± 20 180 250 See Fig.12a, 12b, 15, 16
W/°C V mJ
A mJ
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case
i Case-to-Sink, Flat Greased Surface i Junction-to-Ambient j Junction-to-Ambient (PCB Mount)
Typ. ––– 0.50 ––– –––
Max. 0.90 ––– 62 40
Units °C/W
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1
07/23/10
IRF3205ZS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
55 ––– ––– ––– 0.051 ––– ––– 4.9 6.5
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 66A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
71 ––– ––– S VDS = 25V, ID = 66A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg
Total Gate Charge
––– 76 110
ID = 66A
Qgs Qgd
Gate-to-Source Charge Gate-to-Drain ("Miller") Charge
––– –––
21 30
––– –––
e nC VDS = 44V VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 28V
tr
Rise Time
––– 95 –––
ID = 66A
td(off) tf
Turn-Off Delay Time Fall Time
––– –––
45 67
––– –––
e ns RG = 6.8 Ω VGS = 10V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
LS
Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss Coss Crss Coss Coss Coss eff.
Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
––– 3450 ––– ––– 550 ––– ––– 310 ––– ––– 1940 ––– ––– 430 ––– ––– 640 –––
and center of die contact VGS = 0V VDS = 25V pF ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
f VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 440
A showing the integral reverse
––– ––– 1.3 ––– 28 42 ––– 25 38
e p-n junction diode.
V TJ = 25°C, IS = 66A, VGS = 0V
e ns TJ = 25°C, IF = 66A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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ID, Drain-to-Source Current (A)
IRF3205ZS/LPbF
ID, Drain-to-Source Current (A)
1000 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1 0.1
4.5V 20µs PULSE WIDTH Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 0.1
4.5V 20µs PULSE WIDTH Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1000 100
TJ = 25°C
TJ = 175°C
10.