AUTOMOTIVE MOSFET. IRF3205ZLPbF Datasheet

IRF3205ZLPbF MOSFET. Datasheet pdf. Equivalent

IRF3205ZLPbF Datasheet
Recommendation IRF3205ZLPbF Datasheet
Part IRF3205ZLPbF
Description AUTOMOTIVE MOSFET
Feature IRF3205ZLPbF; www.DataSheet4U.com PD - 95129 AUTOMOTIVE MOSFET Features l l l l l l IRF3205ZPbF IRF3205ZSPbF IR.
Manufacture International Rectifier
Datasheet
Download IRF3205ZLPbF Datasheet




International Rectifier IRF3205ZLPbF
www.DataSheet4U.com
PD - 95129
AUTOMOTIVE MOSFET
IRF3205ZPbF
IRF3205ZSPbF
Features
l Advanced Process Technology
IRF3205ZLPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
G
RDS(on) = 6.5m
S ID = 75A
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRF3205ZPbF
D2Pak
TO-262
IRF3205ZSPbF IRF3205ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
110
78
75
440
170
Units
A
W
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
1.1
± 20
180
250
See Fig.12a, 12b, 15, 16
-55 to + 175
W/°C
V
mJ
A
mJ
°C
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
iCase-to-Sink, Flat Greased Surface
iJunction-to-Ambient
jJunction-to-Ambient (PCB Mount)
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Typ.
–––
0.50
–––
–––
Max.
0.90
–––
62
40
Units
°C/W
1
3/18/04



International Rectifier IRF3205ZLPbF
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IRF3205ZS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 ––– –––
––– 0.051 –––
––– 4.9 6.5
V VGS = 0V, ID = 250µA
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 66A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
71 ––– ––– S VDS = 25V, ID = 66A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 76 110
ID = 66A
Qgs Gate-to-Source Charge
––– 21 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 30 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 18 –––
VDD = 28V
tr Rise Time
––– 95 –––
ID = 66A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 45 ––– ns RG = 6.8
––– 67 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 3450 –––
––– 550 –––
––– 310 –––
––– 1940 –––
––– 430 –––
––– 640 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 75
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 440
A showing the
integral reverse
––– ––– 1.3
––– 28 42
––– 25 38
ep-n junction diode.
V TJ = 25°C, IS = 66A, VGS = 0V
ens TJ = 25°C, IF = 66A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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International Rectifier IRF3205ZLPbF
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IRF3205ZS/LPbF
1000
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
1
0.1
4.5V 20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
10
0.1
4.5V 20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
10
1
4.0
VDS = 25V
20µs PULSE WIDTH
5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate-to-Source Voltage (V)
11.0
Fig 3. Typical Transfer Characteristics
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120
TJ = 175°C
100
80
60 TJ = 25°C
40
20
0
0
VDS = 10V
20µs PULSE WIDTH
20 40 60 80
ID, Drain-to-Source Current (A)
100
Fig 4. Typical Forward Transconductance
Vs. Drain Current
3







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