Fast S-igbt
SGP10N60
www.DataSheet4U.com
SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
C
• 75% lower Eoff compared to previous ...
Description
SGP10N60
www.DataSheet4U.com
SGB10N60, SGW10N60
Fast S-IGBT in NPT-technology
C
75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
G
E
Type SGP10N60 SGB10N60 SGW10N60 Maximum Ratings Parameter
VCE 600V
IC 10A
VCE(sat) 2.2V
Tj 150°C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67041-A4710-A2 Q67041-A4710-A4 Q67040-S4234
Symbol VCE IC
Value 600 21 10.9
Unit V A
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature
1)
ICpul s VGE EAS
42 42 ±20 70 V mJ
tSC Ptot Tj , Tstg
10 104 -55...+150
µs W °C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00
SGP10N60
www.DataSheet4U.com
SGB10N60, SGW10N60
Symbol Conditions Max. Value Unit
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD version, device on PCB
1)
RthJC RthJA Rt...
Similar Datasheet