IXFA12N50P

Advance Technical Information IXFA 12N50P IXFP 12N50P PolarHVTM Power www.DataSheet4U.com MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA 12N50P IXFP 12N50P VDSS ID25 RDS(on) trr = 500 = 12 ≤ 0.5 ≤ 200 V A Ω ns Symbol VDSS VDGR VGSM VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 500 500 ± 40 ± 30 12 20 12 24 600 20 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ TO-263 (IXFA) G S (TAB) TO-220 (IXFP) G V/ns W °C °C °C °C °C G = Gate S = Source D S (TAB) D = Drain TAB = Drain Features z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-220 TO-263 (TO-220) 300 260 1.13/10 Nm/lb.in. 4 3 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 1 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 150 V V nA μA μA z z z Easy to mount Space savings High power density VGS = 10 V, ID = 0.5 ID25, Note 1 500 mΩ DS99436(09/05) © 2005 IXYS All rights reserved IXFA 12N50P...