WED3DL3216V

www.datasheet4u.com White Electronic Designs 16Mx32 SDRAM FEATURES 40% Space Savings vs. Monolithic Solution Reduced System Inductance and Capacitance 3.3V Operating Supply Voltage Fully Synchronous to Positive Clock Edge Clock Frequencies of 100MHz - 133MHz Burst Operation Sequential or Interleave Burst Length = Programmable 1, 2, 4, 8 or Full Page Burst Read and Write Multiple Burst Read and Single Write Data Mask Control Per Byte Auto and Self Refresh Automatic and Controlled Precharge Commands Suspend Mode and Power Down Mode 119 Pin BGA, 17mm x 23mm WED3DL3216V DESCRIPTION The WED3DL3216V is an 16Mx32 Synchronous DRAM configured as 4x4Mx32. The SDRAM BGA is constructed with two 16Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 17mm by 23mm, BGA. The WED3DL3216V is available in clock speeds of 133MHz, 125MHz, and 100MHz. The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. The package and design provides performance enhancements via a 50% reduction in capacitance vs. two monolithic devices. The design includes internal ground and power planes which reduces inductance on the ground and power pins allowing for improved decoupling and a reduction in system noise. PIN CONFIGURATION (Top view) 1 A B C D E F G H J K L M N P R T U VCCQ NC NC DQC DQC VCCQ DQC DQC VCCQ DQD DQD VCCQ DQ...