WED3DL644V

www.datasheet4u.com White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES 53% Space Savings vs. Monolithic Solution Reduced System Inductance and Capacitance 3.3V Operating Supply Voltage Fully Synchronous to Positive Clock Edge Clock Frequencies of 133, 125 and 100MHZ Burst Operation Sequential or Interleaved Burst Length = Programmable 1, 2, 4, 8 or Full Page Burst Read and Write Multiple Burst Read and Single Write Data Mask Control Per Byte Auto and Self Refresh Automatic and Controlled Precharge Commands Suspend Mode and Power Down Mode 17mm x 23mm, 153 BGA This product is subject to change without notice. DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by 23mm, BGA. The WED3DL644V is available in clock speeds of 133MHZ, 125MHZ and 100MHZ. The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. The package and design provides performance enhancements via a 50% reduction in capacitance vs. four monolithic devices. The design includes internal ground and power planes which reduces inductance on the ground and power pins allowing for improved decoupling and a reduction in system noise. PINOUT (TOP VIEW) A B C D E F G H J K L M N P R T U 1 DQ41 DQ40 DQ33 DQ32 NC NC...