STR4A60

www.datasheet4u.com SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol STR4A60 Features ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 4 A ) ◆ High Commutation dv/dt ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is new surface mounted package line up suitable for space limited application such as low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. TO-126 3 2 1 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 95 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 4.0 30/33 4.5 1.5 0.1 1 7.0 - 40 ~ 125 - 40 ~ 150 0.26 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass Units V A A A2 s W W A V °C °C g Jun, 2003. Rev. 3 copyright@SemiWell Semiconductor Co., LTd., All rights reserved. 1/6 www.datasheet4u.com STR4A60 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -2.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Ω Gat...