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STD2NC45-1 STQ1NC45R-AP
N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH™ Power MOSFET
General features
Type STD2NC45-1 STQ1NC45R-AP
■ ■ ■ ■
VDSS 450V 450V
RDS(on) <4.5Ω <4.5Ω
ID 1.5A 0.5A
Pw 30W 3.1W
3 2 1
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark IPAK
TO-92 (ammopak)
Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
Internal schematic diagram
Applications
■
Switching application – Switch mode low power supplies (SMPS) – Low power, low cost CFL (compact fluorescent lamps) – Low power battery chargers
Order codes
Part number STD2NC45-1 STQ1NC45R-AP Marking D2NC45 Q1NC45R Package IPAK TO-92 Packaging Tube Ammopak
July 2006
Rev 3
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Contents
STD2NC45-1 - STQ1NC45R-AP
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STD2NC45-1 - STQ1NC45R-AP
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Value Parameter IPAK Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor 1.5 0.95 6 30 0.24 3 –65 to 150 Max. operating junction temperature °C 450 ±30 0.5 0.315 2 3.1 0.025 TO-92 V V A A A W W/°C V/ns °C Unit
PTOT
(2)
dv/dt
Peak diode recovery voltage slope Storage temperature
Tstg Tj
1. Pulse width limited by safe operating area 2. ISD < 0.5A, di/dt < 100 A/µs, VDD =80% V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-amb Rthj-lead Tl
Thermal data
Value Parameter IPAK Thermal resistance junction-case max Thermal resistance junction-ambient max Thermal resistance junction-lead max Maximum lead temperature for soldering purpose 4.1 100 -275 TO-92 -120 40 260 °C/W °C/W °C/W °C Unit
Table 3.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25°C, ID=IAS, VDD=50V) Value 1.5 25 Unit A mJ
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Electrical characteristics
STD2NC45-1 - STQ1NC45R-AP
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage Drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test condictions ID = 250µA, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125°C VGS = ± 30V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5A 2.3 3 4.1 Min. 450 1 50 ±100 3.7 4.5 Typ. Max. Unit V µA µA nA V Ω
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS > ID(on) x RDS(on)max, ID = 0.5A Min. Typ. 1.1 160 27.5 4.7 7 1.3 3.2 Max. Unit S pF pF pF nC nC nC
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 360V, ID = 1.5A, VGS = 10V, RG = 4.7Ω (see Figure 18)
10
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
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STD2NC45-1 - STQ1NC45R-AP
Electrical characteristics
Table 6.
Symbol td(on) tr tr(Voff) tf tc
Switching times
Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test condictions VDD = 225V, ID = 0.5A RG = 4.7Ω VGS = 10V (see Figure 17) VDD = 360V, ID = 1.5A, RG = 4.7Ω, VGS = 10V (see Figure 17) Min. Typ. 6.7 4 8.5 12 18 Max. Unit ns ns ns ns ns
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 1.5A, VGS = 0 ISD = 1.5A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see Figure 22) 225 530 4.7 Test condictions Min Typ. Max Unit 1.5 6.0 1.6 A A V ns µC A
VSD (2) trr Qrr IRRM
1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
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Electrical char.