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Q1NC45 Dataheets PDF



Part Number Q1NC45
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL MOSFET
Datasheet Q1NC45 DatasheetQ1NC45 Datasheet (PDF)

www.DataSheet4U.com www.datasheet4u.com STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 s s s s s VDSS 450 V 450 V RDS(on) < 4.5 Ω < 4.5 Ω ID 1.5 A 0.5 A Pw 30 W 3.1 W 3 2 1 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK IPAK TO-92 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased Po.

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www.DataSheet4U.com www.datasheet4u.com STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1Ω - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET TYPE STD2NC45-1 STQ1NC45 s s s s s VDSS 450 V 450 V RDS(on) < 4.5 Ω < 4.5 Ω ID 1.5 A 0.5 A Pw 30 W 3.1 W 3 2 1 TYPICAL RDS(on) = 4.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK IPAK TO-92 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. TO-92 (Ammopack) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) s LOW POWER BATTERY CHARGERS s ORDERING INFORMATION SALES TYPE STD2NC45-1 STQ1NC45 STQ1NC45-AP MARKING D2NC45 Q1NC45 Q1NC45 PACKAGE IPAK TO-92 TO-92 PACKAGING TUBE BULK AMMOPAK www.DataSheet4U.com June 2003 1/11 www.DataSheet4U.com www.datasheet4u.com STD2NC45-1, STQ1NC45 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tj Tstg Parameter STD2NC45-1 Value STQ1NC45 Unit V V V 0.5 0.315 2 3.1 0.025 A A A W W/°C V/ns °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.5 0.95 6 30 0.24 450 450 ± 30 3 -65 to 150 -65 to 150 ( ) Pulse width limited by safe operating area (1) ISD ≤0.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. THERMAL DATA IPAK Rthj-case Rthj-amb Rthj-lead Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Junction-lead Max Maximum Lead Temperature For Soldering Purpose 275 4.1 100 120 40 260 TO-92 °C/W °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter IPAK Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1.5 25 Max Value TO-92 A mJ Unit www.DataSheet4U.com 2/11 www.DataSheet4U.com www.datasheet4u.com STD2NC45-1, STQ1NC45 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 30V VDS = VGS, ID = 250µA VGS = 10V, ID = 0.5 A 2.3 3 4.1 Min. 450 1 50 ±100 3.7 4.5 Typ. Max. Unit V µA µA nA V Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 0.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 1.1 Max. Unit S pF pF pF 160 27.5 4.7 SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 225 V, ID = 0.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) VDD = 360V, ID = 1.5 A, VGS = 10V, RG = 4.7Ω Min. Typ. 6.7 4 7 1.3 3.2 10 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 360V, ID = 1.5 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 8.5 12 18 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.5 A, VGS = 0 ISD = 1.5 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 225 530 4.7 Test Conditions Min. Typ. Max. 1.5 6.0 1.6 Unit A A V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. www.DataSheet4U.com 3/11 www.DataSheet4U.com www.datasheet4u.com STD2NC45-1, STQ1NC45 Safe Operating Area For IPAK Thermal Impedance For IPAK Safe Operating Area For TO-92 Thermal Impedance For TO-92 Output Characteristics Transfer Characteristics www.DataSheet4U.com 4/11 www.DataSheet4U.com www.datasheet4u.com STD2NC45-1, STQ1NC45 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature www.DataSheet4U.com 5/11 www.DataSheet4U.com www.datasheet4u.com STD2NC45-1, STQ1NC45 Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Max Id.


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