FDW9926A
FDW9926A
July 2008
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V...
Description
FDW9926A
July 2008
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
Applications
Battery protection Load switch Power management
Features
4.5 A, 20 V.
RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V
Optimized for use in battery circuit applications
Extended VGSS range (±10V) for battery applications
High performance trench technology for extremely low RDS(ON)
Low profile TSSOP-8 package
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Total Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9926A
FDW9926A
13’’
©2008 Fairchild Semiconductor Corporation
1 2 3 4
Ratings
20 ±12 4.5 30 1.0 0.6 –55 to +150
125 208
Tape width 12mm
8 7 6 5
Units
V V A W °C
°C/W
Quantity 2500 units
FDW9926A Rev E1(W)
FDW9926A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditi...
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