9926A Datasheet | FDW9926A





9926A PDF File (Datasheet) Download

Part Number 9926A
Description FDW9926A
Manufacture Fairchild Semiconductor
Total Page 5 Pages
PDF Download Download 9926A PDF File

Features: www.datasheet4u.com FDW9926A March 200 5 FDW9926A Dual N-Channel 2.5V Specifi ed PowerTrench® MOSFET General Descrip tion This N-Channel 2.5V specified MOSF ET is a rugged gate version of Fairchil d's Semiconductor’s advanced PowerTre nch process. It has been optimized for power management applications with a wi de range of gate drive voltage (2.5V 10V). Features • 4.5 A, 20 V. RDS( ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 4 5 mΩ @ VGS = 2.5 V • Optimized for use in battery circuit applications Extended VGSS range (±10V) for batte ry applications • High performance tr ench technology for extremely low RDS(O N) • Low profile TSSOP-8 package App lications • Battery protection • Lo ad switch • Power management G2 S2 S 2 D2 G1 S1 S1 D1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Sy mbol VDSS VGSS ID PD TJ, TSTG Drain-Sou rce Voltage Gate-Source Voltage Drain C urrent – Continuous – Pulsed Total Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units.

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www.datasheet4u.com
March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 10V).
Applications
Battery protection
Load switch
Power management
Features
4.5 A, 20 V.
RDS(ON) = 32 m@ VGS = 4.5 V
RDS(ON) = 45 m@ VGS = 2.5 V
Optimized for use in battery circuit applications
Extended VGSS range (±10V) for battery applications
High performance trench technology for extremely
low RDS(ON)
Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Total Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
9926A
FDW9926A
13’’
©2005 Fairchild Semiconductor Corporation
1
2
3
4
Ratings
20
±12
4.5
30
1.0
0.6
–55 to +150
125
208
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDW9926A Rev E(W)

              






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