2SC4747

www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4747 DESCRIPTION ·With TO-3PFM package ·High speed switching ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-surge Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 20 50 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4747 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Fall time CONDITIONS IC=10mA ;RBE=0 IE=10mA ;IC=0 VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=8A ; IB=1.6A IC=8A ; IB=1.6A ICP=7A;IB1=1.4A 8 MIN 800 6 0.5 30 5 1.5 0.3 V V µs TYP. MAX UNIT V V mA SYMBOL V(BR)CEO V(BR)EBO ICES hFE VCE(sat) VBE(sat) tf 2 www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4747 Fig.2 outline dimensions 3 www.datasheet4...