POWER TRANSISTOR. 2SC4747 Datasheet

2SC4747 TRANSISTOR. Datasheet pdf. Equivalent

2SC4747 Datasheet
Recommendation 2SC4747 Datasheet
Part 2SC4747
Description SILICON POWER TRANSISTOR
Feature 2SC4747; www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2.
Manufacture SavantIC
Datasheet
Download 2SC4747 Datasheet




SavantIC 2SC4747
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4747
DESCRIPTION
·With TO-3PFM package
·High speed switching
·High breakdown voltage
APPLICATIONS
·Character display horizontal deflection
output applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IC(surge)
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-surge
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
800
6
10
20
50
150
-55~150
UNIT
V
V
V
A
A
W



SavantIC 2SC4747
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4747
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
ICES Collector cut-off current
VCE=1500V; RBE=0
hFE DC current gain
IC=1A ; VCE=5V
VCE(sat) Collector-emitter saturation voltage IC=8A ; IB=1.6A
VBE(sat) Base-emitter saturation voltage
IC=8A ; IB=1.6A
tf Fall time
ICP=7A;IB1=1.4A
MIN TYP. MAX UNIT
800 V
6V
0.5 mA
8 30
5V
1.5 V
0.3 µs
2



SavantIC 2SC4747
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4747
Fig.2 outline dimensions
3







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