POWER TRANSISTOR. 2SC4804 Datasheet

2SC4804 TRANSISTOR. Datasheet pdf. Equivalent

2SC4804 Datasheet
Recommendation 2SC4804 Datasheet
Part 2SC4804
Description SILICON POWER TRANSISTOR
Feature 2SC4804; www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2.
Manufacture SavantIC
Datasheet
Download 2SC4804 Datasheet




SavantIC 2SC4804
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4804
DESCRIPTION
·With ITO-220 package
·High breakdown voltage
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
IB
PT
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
900
600
7
3
5
1
30
150
-55~150
UNIT
V
V
V
A
A
A
W



SavantIC 2SC4804
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4804
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=0.8A ; VCE=5V
MIN TYP. MAX UNIT
600 V
900 V
7V
0.6 V
1.2 V
0.1 mA
0.1 mA
10
2



SavantIC 2SC4804
www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC4804
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3







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