SPP11N65C3. 11N65C3 Datasheet

11N65C3 SPP11N65C3. Datasheet pdf. Equivalent

11N65C3 Datasheet
Recommendation 11N65C3 Datasheet
Part 11N65C3
Description SPP11N65C3
Feature 11N65C3; www.datasheet4u.com SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor Feature • New revo.
Manufacture Infineon Technologies
Datasheet
Download 11N65C3 Datasheet




Infineon Technologies 11N65C3
www.datasheet4u.com
SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
VDS
RDS(on)
ID
650 V
0.38
11 A
P-TO262-3-1 P-TO220-3-31 P-TO220-3-1
P-TO220-3-31
3
12
Type
SPP11N65C3
SPA11N65C3
SPI11N65C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4557
P-TO220-3-31 Q67040-S4554
P-TO262-3-1 Q67040-S4561
Marking
11N65C3
11N65C3
11N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
11 111)
7 71)
33 33
340 340
Unit
A
A
mJ
0.6 0.6
44
±20 ±20
±30 ±30
125 33
-55...+150
A
V
W
°C
Page 1
2003-08-15



Infineon Technologies 11N65C3
www.datasheet4u.com
SPP11N65C3, SPA11N65C3
SPI11N65C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
min.
-
-
-
-
Values
typ. max.
-1
- 3.8
- 62
- 80
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=4A
650 5)
-
-
730
-
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate input resistance
RG
ID=500µA, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
VGS=20V, VDS=0V
VGS=10V, ID=7A
Tj=25°C
Tj=150°C
f=1MHz, open drain
2.1
-
-
-
-
-
-
3 3.9
0.1 1
- 100
- 100
0.34
0.92
0.86
0.38
-
-
Unit
V
µA
nA
Page 2
2003-08-15



Infineon Technologies 11N65C3
www.datasheet4u.com
SPP11N65C3, SPA11N65C3
SPI11N65C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,6) Co(er)
energy related
Effective output capacitance,7) Co(tr)
time related
VDS2*ID*RDS(on)max,
ID=7A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDD=380V, VGS=0/10V,
ID=11A,
RG=6.8
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=480V, ID=11A
Gate to drain charge
Gate charge total
Qgd
Qg
VDD=480V, ID=11A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=11A
min.
-
Values
typ.
8.3
max.
-
Unit
S
- 1200 - pF
- 390 -
- 30 -
- 45 -
- 85 -
- 10 - ns
-5-
- 44 70
- 59
- 5.5 - nC
- 22 -
- 45 60
- 5.5 - V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5HTRB @ 1000h, 600V, Tjmax resp. accelerated HTRB @ 168h, 600V, Tj= 175°C
according to JEDEC A108, MIL-STD 750/1038-1040, 1042
6Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
7Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2003-08-15







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