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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SIL...
www.datasheet4u.com
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL
TRANSISTOR
PIN CONFIGURATION (
NPN)
1 = BASE 2 = EMITTER 3 = COLLECTOR
CMBT2484 SOT23
MARKING: 1U
3
1
2
LOW NOISE
TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous PD Device Dissipation FR-5 Board* Derate above 25 deg C Rth (j-a) Thermal Resistance Junction to Ambient PD Device Dissipation Alumina Substrate** Derate above 25 deg C Rth (j-a) Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Tj,Tstg *FR-5=1.0X0.75X0.062 in **Alumine=0.4x0.3x0.024 in 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted) CHARACTERISTICS SYMBOL TEST CONDITION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Cut off Current VCEO VCBO VEBO ICBO IC=10mA, IB=O IC=10uA, IE=0 IE=10uA, IC=0 VCB=45V, IE=0 VALUE 60 60 6 50 225 1.8 556 300 2.4 417 -55 to +150 UNIT V V V mA mW mW/deg C deg C/W mW mW/deg C deg C/W deg C
MIN 60 60 6.0 250 -
TYP -
MAX 10 10 10 800 0.35 0.95
UNIT V V V nA uA nA
Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Noise Figure
VCB=45V, IE=0 TA=150 deg C IEBO VEB=5V, IC=0 hFE IC=1mA, VCE=5V IC=10mA, VCE=5V...