CMBT4125

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4125 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT4125 = 5D PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 2 mA; –VCE = 1 V –V CBO –V CEO –V EBO –IC Ptot hFE max. max. max. max. max min. max. 30 30 4 200 350 50 150 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO max. max. 30 30 V V Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4125 Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient –V EBO –IC Ptot Tstg Tj max. 4 max. 200 max 350 –55 to +150 max. 150 V mA mW °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 10 mA; IE = 0 Em...