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CMBT4401 Dataheets PDF



Part Number CMBT4401
Manufacturers CDIL
Logo CDIL
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet CMBT4401 DatasheetCMBT4401 Datasheet (PDF)

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage Collector current (DC) DC current gain IC = 150 mA; VCE = 1 V Total power dissipation up to Tamb = 25 °C RATINGS .

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www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N–P–N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage Collector current (DC) DC current gain IC = 150 mA; VCE = 1 V Total power dissipation up to Tamb = 25 °C RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage Collector–base voltage Emitter–base voltage Collector current (DC) Total power dissipation up to Tamb = 25°C Storage temperature range Junction temperature VCEO IC hFE Ptot max. max. min. max. max 40 V 600 mA 100 300 250 mW VCEO VCBO VEBO IC Ptot Tstg Tj max. 40 V max. 60 V max. 6 V max. 600 mA max 250 mW –55 to +150 ° C max. 150 ° C Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4401 THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter breakdown voltage IC = 1.0 mA; IB = 0 Collector–base breakdown voltage IC = 100 µA; IE = 0 Emitter–base breakdown voltage IE = 100 µA; IC = 0 Base cut–off current VCE = 35 V; VEB = 0.4 V Collector cut–off current VCE = 35 V; VEB = 0.4 V D.C. current gain IC = 0.1 mA; VCE = 1 V IC = 1.0 mA; VCE = 1 V IC = 10 mA; VCE = 1 V IC = 150 mA; VCE = 1 V IC = 500 mA; VCE = 2 V Saturation voltage IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA Transition frequency f = 100 MHz; IC = 20 mA; VCE = 10 V Collector–base capacitance IE = 0; VCB = 5 V; f = 100 kHz Emitter–base capacitance IC = 0; VBE = 0.5 V; f = 100 kHz Input impedance; f = 1 kHz; IC = 1 mA; VCE = 10 V Voltage feed–back ratio IC = 1 mA; VCE = 10 V; f = 1 kHz Small–signal curent gain; f = 1 kHz; IC = 1 mA; VCE = 10 V Rth j–a = 500 K/W V(BR)CEO > V(BR)CBO > V(BR)EBO > IBEX ICEX < < 40 V 60 V 6 V 0.1 µA 0.1 µA hFE hFE hFE hFE hFE > > > > 20 40 80 100 to 300 40 VCEsat VBEsat VCEsat VBEsat fT Ccb C eb hie < < < > < < 0.4 V 0.75 to 0.95 V 0.75 V 1.2 V 250 MHz 8 pF 30 pF 1 kΩ 8 kΩ min. max. hre hfe min. 0.1 × 10 –4 max. 30 × 10–4 min. max. 40 500 Continental Device India Limited Data Sheet Page 2 of 3 www.datasheet4u.com CMBT4401 Output admittance; f = 1 kHz; IC = 1 mA; VCE = 10 V Switching times (resistive load) Turn–on time IC = 150 mA; IB1 = 15 mA; VCC = 30 V; VEB = 2 V delay time rise time Turn–off time IC = 150 mA; VCC = 30 V; IB1 = IB2 = 15 mA storage time fall time hoe min. max. 1 µS 30 µ S td tr max. max. 15 ns 20 ns ts tf max. max. 225 ns 30 ns Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality.


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