CMBT4403

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage Collector current (DC) DC current gain IC = 150 mA; VCE = 2 V Total power dissipation up to Tamb = 25 °C RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage Collector–base voltage Emitter–base voltage Collector current (DC) Total power dissipation up to Tamb = 25 °C Storage temperature range Junction temperature –V CEO –IC hFE Ptot max. max. min. max. max 40 V 600 mA 100 300 250 mW –V CEO –V CBO –V EBO –IC Ptot Tstg Tj max. 40 V max. 40 V max. 5 V max. 600 mA max 250 mW –55 to +150 ° C max. 150 ° C Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4403 THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter breakdown voltage –IC = 1.0 mA; IB = 0 Collector–base breakdown voltage –IC = 100 µA; IE = 0 Emitter–base breakdown voltage –IE = 100 µA; IC = 0 Base cut–off current –VCE = 35 V; –VEB = 0.4 V Collector cut–off current –VCE = 35 V; –VEB = 0.4 V D.C. current gain –IC = 0.1 mA; –VCE = 1 V –IC = 1.0 mA; –VCE = 1 V –IC = 10 mA; –VCE = 1 V –IC = 150 mA; –VCE ...