CMBT5400

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company www.datasheet4u.com SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 10 mA; –VCE = 5 V –V CBO –V CEO –V EBO –IC Ptot hFE max. max. max. max. max min. max. 130 120 5 500 250 40 180 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC max. max. max. max. 130 120 5 500 V V V mA Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT5400 Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Ptot Tstg Tj max 250 –55 to +150 max. 150 mW °C °C Rth j–a 200 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 100 µA; IE = 0...