CMBT5551

Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Collector–emitter saturation voltage IC = 50 mA; IB = 5 mA D.C. current gain IC = 10 mA; VCE = 5 V RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max max. max. min. 180 160 600 250 150 V V mA mW °C 0.2 V 80 VCBO VCEO VEBO max. max. max. 180 V 160 V 6 V Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT5551 Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Storage temperature range THERMAL RESISTANCE from junction to ambient IC Ptot Tj Tstg max. 600 max 250 max. 150 –55 to +150 mA mW °C °C Rth j–a 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector cut–off current ICBO IE = 0; VCB = 120 V ICBO IE = 0; VCB = 120 V; Tamb = 100 °C Emitter cut–off current IEBO IC = 0; VEB = 4 V Breakdown voltages V(BR)...