CMBT6517

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT6517 HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT6517 = 1Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 10 mA; –VCE = 10 V –V CBO –V CEO –V EBO –IC Ptot hFE max. max. max. max. max min. 350 350 5 500 225 30 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC Ptot Total power dissipation at Tamb = 25°C Storage temperature Tstg Junction temperature Tj max. 350 max. 350 max. 5 max. 500 max 225 –55 to +150 max. 150 V V V mA mW °C °C Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT6517 THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –IC = 1 mA –V(BR)CEO min. Collector–base breakdown voltage –IC = 100 µA –V(BR)CBO min. Emitter–base breakdown volt...