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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 ...
www.datasheet4u.com
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBT6517
HIGH–VOLTAGE
TRANSISTOR
N–P–N
transistor
Marking CMBT6517 = 1Z
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 10 mA; –VCE = 10 V
–V CBO –V CEO –V EBO –IC Ptot hFE
max. max. max. max. max min.
350 350 5 500 225 30
V V V mA mW
RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC Ptot Total power dissipation at Tamb = 25°C Storage temperature Tstg Junction temperature Tj
max. 350 max. 350 max. 5 max. 500 max 225 –55 to +150 max. 150
V V V mA mW °C °C
Continental Device India Limited
Data Sheet
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CMBT6517
THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient
Rth j–a
556
°C/mW
CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –IC = 1 mA –V(BR)CEO min. Collector–base breakdown voltage –IC = 100 µA –V(BR)CBO min. Emitter–base breakdown volt...