CMBT6520

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z www.datasheet4u.com Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 10 mA; –VCE = 10 V –VCBO –VCEO –VEBO –IC P tot hFE max. max. max. max. max min. 350 350 5 500 225 30 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCBO Collector–emitter voltage (open base) –VCEO Emitter–base voltage (open collector) –VEBO Collector current (d.c.) –IC P tot Total power dissipation at Tamb = 25°C Storage temperature Tstg Junction temperature Tj max. 350 max. 350 max. 5 max. 500 max 225 –55 to +150 max. 150 V V V mA mW °C °C Continental Device India Limited Data Sheet Page 1 of 4 www.datasheet4u.com CMBT 6520 THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO –IC = 1 mA Collector–base breakdown voltage –IC = 100 µA –V(BR)CBO Emitter–base breakdown voltage –IE = 10 µA –V(BR)EBO Collector cut–off current –VCB = 2...