CMBT8598

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT8598 = 2K CMBT8599 = 2W PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 100 mA; –VCE = 5 V –V CBO –V CEO –V EBO –IC Ptot hFE CMBT 8598 max. 60 max. 60 max. max. max. min. 75 8599 80 V 80 V V mA mW 75 5 500 225 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC max. max. max. max. 60 60 5 500 80 V 80 V V mA Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT8598 CMBT8599 Total power dissipation at Tamb = 25°C Ptot Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient max Tstg Tj 225 –55 to +150 max. 150 mW °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. 60 –IC = 1 mA; –IE = 0 Collector–bas...