CMBT918

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B www.datasheet4u.com Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 3 mA; –VCE = 1 V –V CBO –V CEO –V EBO –IC Ptot hFE max. max. max. max. max min. 30 15 3 350 225 20 V V V mA mW RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC max. max. max. max. 30 15 3 350 V V V mA Continental Device India Limited Data Sheet Page 1 of 4 www.datasheet4u.com CMBT918 Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Ptot Tstg Tj max 225 –55 to +150 max. 150 mW °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 3 mA; –IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 1 µA; –IE = 0 Emitter–base breakdown voltage –V(BR)EBO min. –IE = 10 µA; –IC = 0 C...