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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 ...
www.datasheet4u.com
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
CMBTA05 CMBTA06
SILICON EPITAXIAL
TRANSISTORS
N–P–N
transistor
Marking CMBTA05 = 1H CMBTA06 = 1G
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot D.C. current gain hFE IC = 100 mA; VCE = 1 V Transition frequency at f = 100 MHz fT IC = 10 mA; VCE = 2 V Collector–emitter saturation voltage VCEsat IC = 100 mA; IB = 10 mA CMBT A05 max. 60 max. 60 max. max. max. min. min. max. A06 80 V 80 V V mA mW
4 500 250 100 100 0.25
MHz
V
Continental Device India Limited
Data Sheet
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CMBTA05 CMBTA06
RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient
max. max. max. max. max. max. max.
60 60
80 V 80 V 4 V 500 mA 250 mW –55 to +150 °C 150 °C
Rth j–a
=
5...