CMBTA43

Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Junction temperature D.C. current gain IC = 10 mA; VCE = 10 V Transition frequency at f = 35 MHz IC = 10 mA; VCE = 20 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 20 V VCBO VCEO VEBO IC Ptot Tj hFE fT Cre CMBT A42 max. 300 max. 300 max. max. max. max. min. min. max. 3 A43 200 V 200 V V mA mW °C 6 500 250 150 40 50 MHz 4 pF Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBTA42 CMBTA43 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.c.) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient max. 300 max. 300 max. max. max. –55 max. 200 V 200 V 6 V 500 mA 250 mW to +150 °C 150 °C ...