CMBTA56

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 100 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 100 mA; –VCE = 1 V Collector–emitter saturation voltage –IC = 100 mA; IB = 10 mA –V CBO –V CEO –V EBO –IC Ptot hFE fT VCEsat CMBT A55 max. 60 max. 60 max. max. A56 80 V 80 V V mA mW 4 500 250 100 50 0.25 min. min. max. MHz V Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBTA55 CMBTA56 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient –V CBO –V CEO –V EBO –IC Ptot Tstg Tj CMBT A55 max. 60 max. 60 max. max. max. –55 max. A56 80 V 80 V 4 V 500 mA 250 mW to +150 °C 1...