CMBTA93

www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 10 mA; –VCE = 10 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V Collector–base capacitance at f = 1 MHz IE = 0; –VCB = 20 V –V CBO –V CEO –V EBO –IC Ptot hFE fT C cb CMBT A92 max. 300 max. 300 max. max. A93 200 V 200 V V mA mW 5 500 250 40 50 min. min. max. 6 MHz 8 pF Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBTA92 CMBTA93 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient –V CBO –V CEO –VEBO –IC Ptot Tstg Tj CMBT A92 max. 300 max. 300 max. max. max –55 max. A93 200 V 200 V 5 V 500 mA 250 mW to +150 °C...