IRHM7054

www.datasheet4u.com PD - 90887E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRHM7054 IRHM3054 IRHM4054 IRHM8054 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.027Ω 0.027Ω 0.027Ω 0.027Ω ID 35*A 35*A 35*A 35*A IRHM7054 JANSR2N7394 60V, N-CHANNEL REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7394 JANSF2N7394 JANSG2N7394 JANSH2N7394 TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Dr...