IRHM7064

Previous Datasheet www.datasheet4u.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1564 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7064 IRHM8064 N-CHANNEL MEGA RAD HARD 60 Volt, 0.021Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/ Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Product Summary Part Number IRHM7064 IRHM8064 BVDSS 60V 60V RDS(on) 0.021Ω 0.021Ω ID 35A* 35A* Features: s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 6 Rads (Si) Sin...