IRHM4260

www.datasheet4u.com PD - 91332D RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-254AA) Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω 300K Rads (Si) 0.070Ω 600K Rads (Si) 0.070Ω 1000K Rads (Si) 0.070Ω ID 35*A 35*A 35*A 35*A REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY ™ IRHM7260 JANSR2N7433 200V, N-CHANNEL QPL Part Number JANSR2N7433 JANSF2N7433 JANSG2N7433 JANSH2N7433 TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed D...