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SHINDENGEN
Schottky Rectifiers (SBD)
Dual
SF10SC4
40V 10A
FEATURES Tj150 PRRSM avalanche guaranteed Fully Isolated Molding Dielectric strength 2kV guaranteed APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication
OUTLINE DIMENSIONS
Case : FTO-220 Unit : mm
RATINGS
Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131 I FSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 PRRSM Pulse width 10Ês, Rating of per diode, Tj=25 Repetitive Peak Surge Reverse Power Vdis Terminals to case, AC 1 minute Dielectric Strength TOR (Recommended torqueF0.3N¥m) Mounting Torque Electrical Characteristics (If not specified Item Symbol VF Forward Voltage Reverse Current IR Junction Capacitance Cj Thermal Resistance Æjc Tc=25) Conditions Ratings -40`150 150 40 45 10 150 330 2 0.5 Ratings Max.0.55 Max.3.5 Typ.180 Max.2.3 Unit V V A A W kV N¥m Unit V mA pF /W
I F=5A, Pulse measurement, Rating of per diode VR=VRM, Pulse measurement, Rating of per diode f=1MHz, VR=10V, Rating of per diode junction to case
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
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SF10SC4
50
Forward Voltage
10
Forward Current IF [A]
Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage VF [V]
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SF10SC4
Junction Capacitance
f=1MHz Tc=25°C TYP per diode
10000
Junction Capacitance Cj [pF]
1000
100
0.1
1
10
Reverse Voltage VR [V]
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SF10SC4
1000
Reverse Current
Tc=150°C [MAX]
100
Tc=150°C [TYP]
Reverse Current IR [mA]
Tc=125°C [TYP] 10 Tc=100°C [TYP]
1
Tc=75°C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
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SF10SC4
20
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
15
DC D=0.05 0.1 0.2 0.3
10 0.5
5 SIN 0.8
0
0
5
10
15
20
25
30
35
40
Reverse Voltage VR [V]
Tj = 150°C
0 VR tp D=tp/T T
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SF10SC4
10
Forward Power Dissipation
DC
Forward Power Dissipation PF [W]
D=0.8 8 SIN 0.3 0.2 6 0.05 0.1 0.5
4
2
0
0
2
4
6
8
10
12
14
16
Average Rectified Forward Current IO [A]
Tj = 150°C 0
IO tp D=tp/T T
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SF10SC4
16 DC
Derating Curve
Average Rectified Forward Current IO [A]
14 D=0.8 12 10 8 6 4 2 0 0.5 SIN 0.3 0.2 0.1 0.05
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 20V 0 0
IO
VR tp D=tp/T T
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SF10SC4
200
Peak Surge Forward Capability
IFSM
10ms
10ms
1 cycle
Peak Surge Forward Current IFSM [A]
150
non-repetitive, sine wave, Tj=25°C before surge current is applied
100
50
0
1
2
5
10
20
50
100
Number of Cycles [cycles]
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SBD
120
Repetitive Surge Reverse Power Derating Curve
100
PRRSM Derating [%]
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
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SBD
10
Repetitive Surge Reverse Power Capability
PRRSM (t p) / PRRSM (t p=10µs) Ratio
1
0.1
1
10
100
Pulse Width t p [ µs]
IRP IR 0.5IRP 0 tp PRRSM = IRP × VRP VR VRP
.