2M x 8 (16-MBIT) DYNAMIC RAM
IS41C8205 IS41LV8205
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
www.datasheet4u.com FEATURES
ISSI
JUNE, 2001
®
...
Description
IS41C8205 IS41LV8205
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
www.datasheet4u.com FEATURES
ISSI
JUNE, 2001
®
DESCRIPTION
The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit highperformance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the IS41C8205 and IS41LV8205 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C8205 and IS41LV8205 are packaged in 28-pin 300-mil SOJ and 28-pin TSOP (Type II) with JEDEC standard pinouts.
Fast Page Mode Access Cycle TTL compatible inputs and outputs Refresh Interval: -- 2,048 cycles/32 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden Single power supply: 5V±10% or 3.3V ± 10% Byte Write and Byte Read operation via two CAS Industrial temperature range -40°C to 85°C
PRODUCT SERIES OVERVIEW
Part No. IS41C8205 IS41LV8205 Refresh 2K 2K Voltage 5V ± 10% 3.3V ± 10%
KEY TIMING PARAMETERS
Parameter RAS Access Time (tRAC) CAS Access Time (tCAC) Column Address Access Time (tAA) Fast Page Mode Cycle Time (tPC) Read/Write Cycle Time (tRC) -50 50 13 25 20 84 -60 60 15 30 25 104 Unit ns ns ns ns ns
PIN CONFIGURATION
28 Pin SOJ, TSOP (Type II)
VCC I/O0 I/O1 I/O2 I/O3 WE RAS NC A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
GND I/O7 I/O6 I/O5 ...
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