IS41C85125

IS41C85125 IS41LV85125 512K x 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE www.datasheet4u.com ISSI DESCRIPTION ® PRELIMINARY INFORMATION AUGUST 2001 FEATURES Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 1024 cycles/16 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: -- 5V ± 10% (IS41C85125) -- 3.3V ± 10% (IS41LV85125) Industrial temperature available The ISSI IS41C85125 and IS41LV85125 are 512,288 x 8-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 8-bit word. These features make the IS41C85125 and the IS41LV85125 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C85125 and IS41LV85125 are available in a 28-pin, 400-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60 60 15 30 25 110 Unit ns ns ns ns ns PIN CONFIGURATION 28-Pin SOJ VCC I/O0 I/O1 I/O2 I/O3 NC WE RAS A9 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 GND I/O7 I/O6 I/O5 I/O4 CAS OE NC A8 A7 A6 A5 A4 GND PIN DESCRIPTIONS A0-A9 I/O0-I/O7 WE OE RAS CAS VCC GND NC Address In...