AP9916H
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AP9916H/J
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low ...
Description
www.DataSheet.co.kr
AP9916H/J
Advanced Power Electronics Corp.
▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
18V 25mΩ 35A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
1
Rating 18 ± 12 35 16 90 50 0.4 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.5 110 Unit ℃/W ℃/W
Data and specifications subject to change without notice
200227032
Datasheet pdf - http://www.DataSheet4U.net/
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AP9916H/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 18 0.5 -
Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98 527 258 112
Max. Units 25 40 1 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF ...
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