K3505-01MR

2SK3505-01MR Super FAP-G Series Features www.datasheet4u.com FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±14 A ID(puls] ±56 V VGS ±30 A IAR *2 14 mJ EAS *1 242 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 2.1 W Tc=25°C 60 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=2.27mH, Vcc=50V *2 Tch < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < =150°C *3 IF< *4 VDS < = 500V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery ti...