SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD424
www.datasheet4u.com
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD424
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·Complement to type 2SB554 ·High power dissipation ·High collector-emitter breakdown voltage : VCEO=180V(min)
APPLICATIONS ·Power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 15 1.5 150 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www.datasheet4u.com
2SD424
SYMBOL
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1A ;IB=0
180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=1A
3.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=5V
2.5
V
ICBO
Collector cut-off current
VCB=90V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=2A ; VCE=5V
40
140
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
300
pF
fT
Transition frequency
IC=2A ; VCE=5V
5
MHz
hFE Classi...