Document
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD386 2SD386A
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DESCRIPTION ·With TO-220C package ·High voltage :VCBO=200V(min) APPLICATIONS ·For TV vertical deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base voltage 2SD386 VCEO Collector-emitter voltage 2SD386A VEBO Emitter-base voltage 2SD386 IC Collector current 2SD386A ICM Collector current-Peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -40~150 2 10 25 W A Open collector Open base 150 6 3 A V CONDITIONS Open emitter VALUE 200 120 V UNIT V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD386 IC=25mA; IB=0 2SD386A 2SD386 IC=1A; IB=0.1A 2SD386A IC=1A; IB=0.1A VCB=180V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.5A ; VCE=5V CONDITIONS
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2SD386 2SD386A
SYMBOL
MIN 120
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 150 1.0 V 1.5 1.8 1.0 5.0 40 8 320 MHz V mA mA
VCEsat
Collector-emitter saturation voltage
VBEsat ICBO IEBO hFE fT
Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency
hFE Classifications C 40-80 D 60-120 E 100-200 F 160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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2SD386 2SD386A
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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