2SD386A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD386 2SD386A www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High voltage :VCBO=200V(min) APPLICATIONS ·For TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD386 VCEO Collector-emitter voltage 2SD386A VEBO Emitter-base voltage 2SD386 IC Collector current 2SD386A ICM Collector current-Peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.75 150 -40~150 2 10 25 W A Open collector Open base 150 6 3 A V CONDITIONS Open emitter VALUE 200 120 V UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD386 IC=25mA; IB=0 2SD386A 2SD386 IC=1A; IB=0.1A 2SD386A IC=1A; IB=0.1A VCB=180V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=0.5A ; VCE=5V CONDITIONS www.datasheet4u.com 2SD386 2SD386A SYMBOL MIN 120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 150 1.0 V 1.5 1.8 1.0 5.0 40 8 320 MHz V mA mA VCEsat Collector-emitter saturation voltage VBEsat ICBO IEBO hFE fT Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency hFE Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Powe...