SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD633 2SD635
www.datasheet4u.com
DESCRI...
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
2SD633 2SD635
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER 2SD633 Collector-base voltage 2SD635 2SD633 VCEO VEBO IC IB PC Tj Tstg Collector-emitter voltage 2SD635 Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open collector Open base 60 5 7 0.7 40 150 -50~150 V A A W Open emitter 60 100 V CONDITIONS VALUE 100 V UNIT
SavantIC Semiconductor
Product Specification
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD633 IC=50mA; IB=0 2SD635 IC=3A; IB=6mA IC=7A; IB=14mA IC=3A; IB=6mA VCB=100V; IE=0 CONDITIONS
www.datasheet4u.com
2SD633 2SD635
SYMBOL
MIN 100
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 60 1.5 2.0 2.5 V V V
VCEsat-1 VCEsat-2 VBEsat
Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SD633 2SD635
ICBO
Collector cut-off current
100 VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=7A ; VCE=3V 2000 1000 3.0 15000
µA
IEBO hFE-1 hFE-2
Emitter cut-off current DC current gain DC current gain
mA
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