POWER TRANSISTOR. 2SD792 Datasheet

2SD792 Datasheet PDF, Equivalent


Part Number

2SD792

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
PDF Download
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2SD792 Datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD792
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High voltage
·Wide area of safe operation
APPLICATIONS
·For line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=90
VALUE
1500
700
4
5
7
35
150
-55~150
UNIT
V
V
V
A
A
W

2SD792 Datasheet
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD792
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH
V(BR)EBO Emitter-base breakdown votage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A
VBEsat
Base-emitter saturation voltage
IC=4.5 A;IB=2 A
ICBO Collector cut-off current
VCB=750V;IE=0
VCB=1500V;IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
tf Fall time
tstg Storage time
IC=4A ; VCE=10V
IC=4A; IBend=1.8A; LB=10µH
MIN TYP. MAX UNIT
700 V
4V
1.5 V
1.5 V
50 µA
1.0 mA
0.1 mA
4 12
0.7 µs
13 µs
2


Features Datasheet pdf SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD792 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ·W ide area of safe operation APPLICATIONS ·For line-operated horizontal deflect ion output applications PINNING(see fig .2) PIN 1 2 3 Base Emitter Collector Fi g.1 simplified outline (TO-3) and symbo l DESCRIPTION Absolute maximum ratings (Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltag e Collector-emitter voltage Emitter-bas e voltage Collector current Collector c urrent-peak Total power dissipation Jun ction temperature Storage temperature T C=90 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 4 5 7 35 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification S ilicon NPN Power Transistors CHARACTERI STICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown votage C ollector-emitter saturation voltage Base-emitter saturation voltage.
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