2SD797 TRANSISTOR Datasheet

2SD797 Datasheet PDF, Equivalent


Part Number

2SD797

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SD797 Datasheet


2SD797
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD797
DESCRIPTION
www.datasheet4u.com
·With TO-3 package
·High current capability
·High power dissipation
APPLICATIONS
·High power amplifier applications
·High power switching applications
·DC-DC converter applications
·Regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Fig.1 simplified outline (TO-3) and symbol
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
100
80
7
30
8
200
175
-65~175
UNIT
V
V
V
A
A
W

2SD797
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD797
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=15A; IB=3A
VBEsat
Base-emitter saturation voltage
IC=15A; IB=3A
ICBO Collector cut-off current
VCB=100V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=15A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
fT Transition frequency
IC=1A ; VCE=5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
RL=10@;IB1=-IB2=0.5A;
VCC=50V
MIN TYP. MAX UNIT
80 V
1.5 V
2.5 V
0.1 mA
0.1 mA
60 200
10
400 pF
1.5 MHz
2.5 µs
6.0 µs
1.5 µs
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD797 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current cap ability ·High power dissipation APPLIC ATIONS ·High power amplifier applicati ons ·High power switching applications ·DC-DC converter applications ·Regul ator applications PINNING(see Fig.2) PI N 1 2 3 Base Emitter Collector Fig.1 si mplified outline (TO-3) and symbol DESC RIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Colle ctor-emitter voltage Emitter-base volta ge Collector current Base current Colle ctor power dissipation Junction tempera ture Storage temperature TC=25 CONDITIO NS Open emitter Open base Open collecto r VALUE 100 80 7 30 8 200 175 -65~175 U NIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Po wer Transistors CHARACTERISTICS Tj=25 u nless otherwise specified PARAMETER Col lector-emitter breakdown voltage Collector-emitter saturation voltage .
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